Recent progress of Ga₂O₃ power technology: large-area devices, packaging and applications

Abstract Benefitted from progress on the large-diameter Ga 2 O 3 wafers and processing techniques, power device technology has witnessed fast advances toward electronics applications. Recently, reports large-area (ampere-class) devices have emerged globally, scope of these works gone well beyond bare-die demonstration into packaging, circuit testing, ruggedness evaluation. These results placed in a unique position as only ultra-wide bandgap semiconductor reaching indispensable milestones for development. This paper presents timely review state-of-the-art ampere-class (current up to >100 A voltage >2000 V), including their static electrical performance, switching characteristics, packaging thermal management, overcurrent/overvoltage reliability. Exciting research opportunities critical technological gaps are also discussed.